Via the combined forces of Intel and Micron, NAND flash memory could get even faster.
This, in turn, could make the memory in your iOS devices even faster and allow for more storage space.
The two companies are apparently working on a 3D NAND flash technologies wherein 3D NAND is stacked in 32 vertical layers. According to Intel this can potentially triple capacity, for example allowing “gum-stick sized” solid state drives with over 3.5 terabytes of storage space, or conventional 2.5-inch solid state drives (SSDs) that surpass 10 terabytes. Even the SSD in a custom-configured iMac or Mac Pro currently tops out at 1 terabyte.
The technology is also said to have a variety of ancillary benefits, including high speeds, a lower cost per gigabyte, and better endurance. It should also save power by enabling new sleep modes that cut power to inactive NAND die while other die remain in use.
A 256-gigabit multilevel cell (MLC) version of the memory is now being sampled with “select partners,” Intel said. A denser 384-gigabit triple-level cell (TLC) product will be sampled later this season. Both forms of memory should be in full-scale production by the fourth quarter of 2015, and matching Intel and Micron SSD lines should be on sale “within the next year.”
This technology could allow the company to completely jettison conventional hard disks in Macs, and all but eliminate storage anxiety with iOS devices. While iPhones and iPads doubled the capacity of their middle and upper tiers last year, the bottom tiers remained stuck at 16 GB, an increasingly tight limit on the amount of apps, photos, videos, and music a person can carry with them.
Cool stuff if they can pull it off.
Stay tuned for additional details as they become available.
Via AppleInsider
2 replies on “Intel, Micron 3D NAND partnership could allow for larger, faster memory modules in Macs, iOS devices”
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